r07ds0866ej0100 rev.1.00 page 1 of 6 aug 08, 2012 preliminary datasheet RJK5002DPD 500v - 2.4a - mos fet high speed power switching features ? low on-state resistance r ds(on) = 3.83 ? typ. (at i d = 1.2 a, v gs = 10 v, ta = 25 ? c) ? high speed switching outline renesas package code: prss0004zg-a ( package name : mp-3a) 1 1. gate 2. drain 3. source 4. drain 3 2 4 d s g absolute maximum ratings (ta = 25 ? c) item symbol value unit drain to source voltage v dss 500 v gate to source voltage v gss ? 30 v drain current i d note1 2.4 a drain peak current i d(pulse) note2 4.8 a body-drain diode reverse drain current i dr note1 2.4 a ? body-drain diode reverse drain peak current i dr(pulse) note2 4.8 a ? avalanche current i ap note3 2.4 a ? channel dissipation pch note4 30 w channel to case thermal impedance ? ch-c 4.17 ? c/w channel temperature tch 150 ? c storage temperature tstg ?55 to +150 ? c notes: 1. limited by tch max. 2. pulse width limited by safe operating area. 2. stch = 25 ? c, tch ? 150 ? c 4. value at tc = 25 ? c r07ds0866ej0100 rev.1.00 aug 08, 2012
RJK5002DPD preliminary r07ds0866ej0100 rev.1.00 page 2 of 6 aug 08, 2012 electrical characteristics (ta = 25 ? c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 500 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 500 v, v gs = 0 gate to source leak current i gss ? ? ? 0.1 ? a v gs = ? 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.5 ? 4.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 3.83 5.00 ? i d = 1.2 a, v gs = 10 v note5 input capacitance ciss ? 165 ? pf output capacitance coss ? 21 ? pf reverse transfer capacitance crss ? 2.6 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 11 ? ns rise time t r ? 12 ? ns turn-off delay time t d(off) ? 22 ? ns fall time t f ? 22 ? ns i d = 1.2 a v gs = 10 v r l = 208 ? rg = 10 ? total gate charge qg ? 6.7 ? nc gate to source charge qgs ? 1.3 ? nc gate to drain charge qgd ? 3.8 ? nc v dd = 400 v v gs = 10 v i d = 2.4 a body-drain diode forward voltage v df ? 0.9 1.5 v i f = 2.4 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 235 ? ns i f = 2.4 a, v gs = 0 v dd = 400 v di f /dt = 100 a/ ? s note: 5. pulse test 6. since this device is equipped with high voltage fet chip (v dss ?? 500 v), high voltage may be supplied. therefore, please be sure to confirm about electr ic discharge between drain terminal and other terminal. 7. this device is sensitive to electrostatic discharge. it is recommended to adopt appropriate cautions when handling this product.
RJK5002DPD preliminary r07ds0866ej0100 rev.1.00 page 3 of 6 aug 08, 2012 main characteristics 02468 10 4 3 2 1 0 048121620 drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 0.1 1 10 10 100 1 drain current i d (a) drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. drain current (typical) v gs = 10 v ta = 25 c pulse test ? 25 0 25 50 75 100 125 150 case temperature tc ( c) static drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. temperature (typical) 1 0.01 0.1 0.001 10 12 4 8 0 16 ta = 25 c pulse test 7 v 10 v 5.4 v 5.8 v v gs = 5 v i d = 2.4 a 13 10 1000 100 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) v gs = 10 v ta = 25 c pulse test 0.6 a 1.2 a di/dt = 100 a/ s v gs = 0, ta = 25 c v ds = 10 v pulse test ta = 75 c 25 c ? 25 c 10 1 110 1000 0.01 0.1 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 0.001 0.1 tc = 25 c 1 shot pw = 100 s 10 s operation in this area is limited by r ds(on)
RJK5002DPD preliminary r07ds0866ej0100 rev.1.00 page 4 of 6 aug 08, 2012 800 0 16 600 12 400 8 200 0 4 246810 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) 0 0.4 0.8 1.2 1.6 2.0 5 2 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) 8 6 4 2 0 ? 25 0 50 100 150 25 125 75 case temperature tc ( c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) v ds = 10 v 1 ma 0.1 ma 1 0 3 4 i d = 2.4 a ta = 25 c v ds v gs v dd = 100 v 250 v 400 v v dd = 400 v 250 v 100 v v gs = 0 ta = 25 c pulse test i d = 10 ma 050 200 150 100 250 1000 100 10 1 v gs = 0 f = 1 mhz ta = 25 c ciss coss crss capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage
RJK5002DPD preliminary r07ds0866ej0100 rev.1.00 page 5 of 6 aug 08, 2012 vin monitor d.u.t. vin 10 v r l v dd = 250 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 10 90% 10% t f switching time test circuit waveform 100 1 m 10 m 100 m 1 100 10 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 4.17 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0. 02 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 10 1 0.01 0.1 0.01
RJK5002DPD preliminary r07ds0866ej0100 rev.1.00 page 6 of 6 aug 08, 2012 package dimensions sc-63 0.32g mass[typ.] tmp3 prss0004zg-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0.2 0.1 0.1 0.5 0.2 0.76 0.76 0.2 2.3 0.2 5.3 0.2 6.6 1.4 0.2 6.1 0.2 1 0.2 2.3 2.5min 2.3 1 package name mp-3a ordering information orderable part no. quantity shipping container RJK5002DPD-00#j2 3000 pcs taping
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